PHOTOELECTROCHEMICAL DETERMINATION OF MINORITY CHARGE-CARRIERS IN HEAVILY DOPED SEMICONDUCTORS

被引:0
作者
MAKUTA, ID
KULAK, AI
机构
来源
DOKLADY AKADEMII NAUK BELARUSI | 1991年 / 35卷 / 11期
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中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A new photoelectrochemical (PEC) method of determining the minority-carrier diffusion length (L) in semiconductors is presented. The expressions for the spectral distribution of photocurrent in degenerated and heavily doped semiconductors are derived from Wilson's model. It makes possible to obtain correct values of from PEC data even if the photoresponse is limited by the surface recombination and/or electrode kinetics.
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页码:1000 / 1003
页数:4
相关论文
共 12 条
[1]   MEASUREMENT OF ENERGY-BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION - WATER-GALLIUM INDIUM ARSENIDE ALLOYS [J].
BALIGA, BJ ;
BHAT, R ;
GHANDHI, SK .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3941-3945
[2]  
DORDRECHT SM, 1988, PHOTOCATALYSIS ENV T
[3]  
FINCLEA HO, 1988, SEMICONDUCTOR ELECTR
[4]  
Gurevich Yu.Ya., 1983, FOTOELEKTROKHIMIYA P
[5]  
Kulak A.I., 1986, ELEKTROKHIMIYA POLUP
[6]  
KULAK AI, 1989, VESTN BELORUSSKOGO 2, P3
[7]   PHOTOCURRENT GENERATION AND OPTICAL-TRANSITIONS ON DEGENERATE CADMIUM-OXIDE PHOTOANODES [J].
MAKUTA, ID ;
POZNYAK, SK ;
KULAK, AI ;
STRELTSOV, EA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (01) :193-199
[8]   HOLE DIFFUSION TRANSPORT AND PHOTOCURRENT GENERATION IN THE DEGENERATE NORMAL-CDO ELECTROLYTE JUNCTION [J].
MAKUTA, ID ;
POZNYAK, SK ;
KULAK, AI .
SOLID STATE COMMUNICATIONS, 1990, 76 (01) :65-68
[9]  
PLESKOV YV, 1989, FOTOELEKTROKHIMICHES
[10]   THE PHOTOELECTROCHEMICAL BEHAVIOR OF POLYCRYSTALLINE AGIN5SE8 [J].
RAZZINI, G ;
BICELLI, LP ;
ARFELLI, M ;
SCROSATI, B .
ELECTROCHIMICA ACTA, 1986, 31 (10) :1293-1298