IMPROVED EPITAXIAL QUALITY OF CAF2 FILMS ON SI AND COSI2 BY RAPID THERMAL ANNEALING

被引：0
|
作者：
PHILLIPS, JM [1 ]
AUGUSTYNIAK, WM [1 ]
MANGER, ML [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：304 / 304
页数：1
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