ENERGY-LEVELS IN QUANTUM-WELLS OF NONPARABOLIC SEMICONDUCTORS

Energy eigenvalues are given for quantum wells of the GaAs/GaAlAs, GaInAs/AlInAs, and InAs/GaAlSb systems, for widths ranging between 0.5 and 20 nm. The energy band nonparabolicity is shown to affect the values significantly particularly for wells with widths of about 2 nm. The InAs/GaAlSb wells are shown to have lowest energy levels with odd parity because of the negative effective mass in the barrier layer for energies below the mid-gap energy. Experiments are suggested for the detection of these levels.