STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE

被引:22
作者
LAITHWAITE, K [1 ]
NEWMAN, RC [1 ]
机构
[1] UNIV READING,JJ THOMSON PHYS LAB,READING,BERKSHIRE,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 24期
关键词
D O I
10.1088/0022-3719/9/24/019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:4503 / 4510
页数:8
相关论文
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