SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY OF CHEMICAL-REACTIVITY AT METAL-GASE INTERFACES

被引:23
作者
MCGOVERN, IT
MCGILP, JF
HUGHES, GJ
MCKINLEY, A
WILLIAMS, RH
NORMAN, D
机构
[1] NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
[2] SCI & ENGN RES COUNCIL,DARESBURY LAB,WARRINGTON,ENGLAND
关键词
Photoelectron spectroscopy - Layered semiconductors - Molybdenum compounds - Synchrotron radiation - Selenium compounds - Gallium compounds;
D O I
10.1016/0042-207X(83)90581-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interaction of seven metals with the basal surface of layered solid gallium selenide has been studied by soft X-ray photoemission spectroscopy using synchrotron radiation. The resultant interfaces can be classified as reactive and non-reactive, giving a correlation between interface reactivity and non-Schottky interfacial barrier formation. The suitability of bulk thermodynamic data as a guide to interface reactivity is discussed and it is argued that such schemes should include alloying as a possible reaction path. The spectrum of reactivity observed in the SXPS data is accommodated within a general model of metal-gallium selenide interaction and the use of secondary adlayers to elucidate the nature of metal-semiconductor interfaces is discussed.
引用
收藏
页码:607 / 612
页数:6
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