MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI

被引：6

作者：

CHYI, JI

BISWAS, D

IYER, SV

KUMAR, NS

MORKOC, H

BEAN, R

ZANIO, K

GROBER, R

DREW, D

机构：

[1] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801

[2] FORD AEROSP & COMMUN CORP,NEWPORT BEACH,CA 92660

[3] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：345 / 347

页数：3

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