MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI

被引：6
|
作者：
CHYI, JI
BISWAS, D
IYER, SV
KUMAR, NS
MORKOC, H
BEAN, R
ZANIO, K
GROBER, R
DREW, D
机构：
[1] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801
[2] FORD AEROSP & COMMUN CORP,NEWPORT BEACH,CA 92660
[3] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584747
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：345 / 347
页数：3
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