MINORITY-CARRIER PROPERTIES OF GAAS ON SILICON

被引：21

作者：

AHRENKIEL, RK ^{[1
]}

ALJASSIM, MM ^{[1
]}

DUNLAVY, DJ ^{[1
]}

JONES, KM ^{[1
]}

VERNON, SM ^{[1
]}

TOBIN, SP ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.100137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：222 / 224

页数：3

共 10 条

[1]

AHRENKIEL RK, IN PRESS SOL CELLS

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[3]

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[4] PROPERTIES OF MODFETS GROWN ON SI SUBSTRATES AT DC AND MICROWAVE-FREQUENCIES [J].

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[5] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

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[6] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J].

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[7]

KROEMER HB, 1986, P MATER RES SOC, V67, P3

[8] LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF DEVICE QUALITY GAAS DIRECTLY ON (100) SI [J].

SHASTRY, SK ;

ZEMON, S .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :467-469

[9] DETERMINATION OF BULK MINORITY-CARRIER LIFETIME AND SURFACE-INTERFACE RECOMBINATION VELOCITY FROM PHOTOLUMINESCENCE DECAY OF A SEMI-INFINITE SEMICONDUCTOR SLAB [J].

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[10]

VERNON S, 1987, MAT RES SOC S P, V91, P187

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