共 50 条
[42]
Particle Modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2002, 41 (4A)
:2213-2219
[44]
Particle modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon
[J].
Shiozawa, M. (shiozawa@chapman.ifs.tohoku.ac.jp),
1600, Japan Society of Applied Physics (41)
[45]
Trends in aluminum etch rate uniformity in a commercial inductively coupled plasma etch system
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1998, 16 (03)
:1059-1067
[46]
High etch rate gallium nitride processing using an inductively coupled plasma source
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1999, 176 (01)
:743-746