CHEMISORPTION OF H2O ON SI(100)

被引:99
作者
SCHMEISSER, D [1 ]
HIMPSEL, FJ [1 ]
HOLLINGER, G [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1983年 / 27卷 / 12期
关键词
D O I
10.1103/PhysRevB.27.7813
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7813 / 7816
页数:4
相关论文
共 19 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   ADSORPTION OF WATER AND METHANOL ON GAAS(110) SURFACES STUDIED BY ULTRAVIOLET PHOTOEMISSION [J].
BUCHEL, M ;
LUTH, H .
SURFACE SCIENCE, 1979, 87 (02) :285-294
[3]   STATES OF WATER MOLECULE ADSORBED ON SI(111) SURFACE [J].
CIRACI, S ;
ERKOC, S ;
ELLIALIOGLU, S .
SOLID STATE COMMUNICATIONS, 1983, 45 (01) :35-38
[4]   DISSOCIATION OF WATER-MOLECULES ON SI SURFACES [J].
CIRACI, S ;
WAGNER, H .
PHYSICAL REVIEW B, 1983, 27 (08) :5180-5183
[5]   AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS [J].
EASTMAN, DE ;
DONELON, JJ ;
HIEN, NC ;
HIMPSEL, FJ .
NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2) :327-336
[6]   IDENTIFICATION OF AN ADSORBED HYDROXYL SPECIES ON THE PT(111) SURFACE [J].
FISHER, GB ;
SEXTON, BA .
PHYSICAL REVIEW LETTERS, 1980, 44 (10) :683-686
[7]   LOCALIZED BOND MODEL FOR H2O CHEMISORPTION ON SILICON SURFACES [J].
FUJIWARA, K .
SURFACE SCIENCE, 1981, 108 (01) :124-134
[8]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115
[9]   PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100) [J].
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1297-1299
[10]  
HIMPSEL FJ, UNPUB