INVESTIGATION OF ORIENTATION EFFECT ON CONTACT RESISTANCE IN SELECTIVELY DOPED AIGAAS/GAAS HETEROSTRUCTURES

被引：19

作者：

KAMADA, M

SUZUKI, T

NAKAMURA, F

MORI, Y

ARAI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1263 / 1265

页数：3

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