NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI

被引：148
作者：
OEHRLEIN, GS
TROMP, RM
TSANG, JC
LEE, YH
PETRILLO, EJ
机构：
[1] IBM Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM Thomas J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期
关键词：
D O I：
10.1149/1.2114140
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
INTEGRATED CIRCUITS, VLSI
引用
收藏
页码：1441 / 1447
页数：7
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