P-N-JUNCTION FORMATION IN INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：69

作者：

CHIANG, PK

BEDAIR, SM

机构：

[1] North Carolina State Univ at, Raleigh, Dep of Electrical &, Computer Engineering, Raleigh, NC,, North Carolina State Univ at Raleigh, Dep of Electrical & Computer Engineering, Raleigh, NC, US

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.95640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：383 / 385

页数：3

共 12 条

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[2]

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[6] EPITAXIAL-GROWTH OF INAS1-XSBX ALLOYS BY MOCVD [J].

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[7] INDIUM ANTIMONIDE-BISMUTH COMPOSITIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

NOREIKA, AJ ;

TAKEI, WJ ;

FRANCOMBE, MH ;

WOOD, CEC .

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[8]

SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[9]

SCHAFFER WJ, 1981, 3RD MBE WORKSH U CAL

[10] LIQUID PHASE EPITAXIAL GROWTH OF INAS1-XSBX [J].

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