EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：100
作者：
METZGER, RA
ALLEN, FG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期
关键词：
D O I：
10.1063/1.333146
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：931 / 940
页数：10
相关论文
共 31 条
[1]   DOPANT INCORPORATION STUDIES IN SILICON MOLECULAR-BEAM EPITAXY (SI MBE) [J].
ALLEN, FG ;
IYER, SS ;
METZGER, RA .
APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :517-527
[2]   SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J].
BEAN, JC ;
SADOWSKI, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :137-142
[3]   ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J].
BEAN, JC .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :654-656
[4]   DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].
BEAN, JC ;
BECKER, GE ;
PETROFF, PM ;
SEIDEL, TE .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913
[5]   SILICON MBE [J].
BEAN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :769-771
[6]   ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J].
BECKER, GE ;
BEAN, JC .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3395-3399
[7]  
ISHIZAKA A, 1982, 2ND P INT S MOL BEAM
[8]   SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].
IYER, SS ;
METZGER, RA ;
ALLEN, FG .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613
[9]   INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].
JOHNSON, WC ;
PANOUSIS, PT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&
[10]   SI-MBE - GROWTH AND SB DOPING [J].
KONIG, U ;
KIBBEL, H ;
KASPER, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04) :985-989
1234