RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS

被引：26

作者：

BASTARD, G ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75231 PARIS 5,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 80卷 / 02期

关键词：

D O I：

10.1002/pssb.2220800227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：641 / 650

页数：10

共 18 条

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FINCK G, 1972, 11 P INT C PHYS SEM, P944

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GULDNER Y, TO BE PUBLISHED

[10]

Ivanov-Omskii V. I., 1976, Soviet Physics - Solid State, V17, P1678