PROGRESS TOWARD CRYSTALLINE-SILICON-BASED LIGHT-EMITTING-DIODES

被引：57
作者：
CANHAM, L
机构：
来源：
MRS BULLETIN | 1993年 / 18卷 / 07期
关键词：
D O I：
10.1557/S0883769400037490
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：22 / 28
页数：7
相关论文
共 62 条
[1]   LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].
ADLER, DL ;
JACOBSON, DC ;
EAGLESHAM, DJ ;
MARCUS, MA ;
BENTON, JL ;
POATE, JM ;
CITRIN, PH .
APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183
[2]  
BASSOUS E, 1992, LIGHT EMISSION SILIC, V256, P23
[3]  
BRADFIELD PL, 1989, APPL PHYS LETT, V51, P100
[4]   VISIBLE-LIGHT EMISSION FROM A POROUS SILICON SOLUTION DIODE [J].
BRESSERS, PMMC ;
KNAPEN, JWJ ;
MEULENKAMP, EA ;
KELLY, JJ .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :108-110
[5]  
CALCOTT PDJ, 1993, MAT RES S C, V283, P143
[6]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[7]   1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD [J].
CANHAM, LT ;
BARRACLOUGH, KG ;
ROBBINS, DJ .
APPLIED PHYSICS LETTERS, 1987, 51 (19) :1509-1511
[8]   EFFICIENT VISIBLE ELECTROLUMINESCENCE FROM HIGHLY POROUS SILICON UNDER CATHODIC BIAS [J].
CANHAM, LT ;
LEONG, WY ;
BEALE, MIJ ;
COX, TI ;
TAYLOR, L .
APPLIED PHYSICS LETTERS, 1992, 61 (21) :2563-2565
[9]  
CANHAM LT, 1991, Patent No. 9108176
[10]   VISIBLE-LIGHT EMISSION FROM HEAVILY DOPED POROUS SILICON HOMOJUNCTION PN DIODES [J].
CHEN, ZL ;
BOSMAN, G ;
OCHOA, R .
APPLIED PHYSICS LETTERS, 1993, 62 (07) :708-710
1234567