EFFECTS OF VERY LOW GROWTH-RATES ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES

被引：38
作者：
METZE, GM
CALAWA, AR
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期
关键词：
D O I：
10.1063/1.94110
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：818 / 820
页数：3
相关论文
共 9 条
[1]   FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].
BOZLER, CO ;
ALLEY, GD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141
[2]   SOURCE CONTAMINATION EFFECTS ON EPITAXY OF GE FILMS ON GE [J].
DAVEY, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1965, 2 (01) :12-&
[3]  
LEWIS B, 1978, NUCLEATION GROWTH TH, P454
[4]   GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE [J].
MUROTANI, T ;
SHIMANOE, T ;
MITSUI, S .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :302-308
[5]   TEMPERATURE-RANGE FOR GROWTH OF AUTO-EPITAXIAL GAAS FILMS BY MBE [J].
NEAVE, JH ;
JOYCE, BA .
JOURNAL OF CRYSTAL GROWTH, 1978, 43 (02) :204-208
[6]   SURFACE STUDIES DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE [J].
PLOOG, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :838-846
[7]   FORMATION CONDITIONS AND STRUCTURE OF GE FILMS DEPOSITED ON POLISHED 111 CAF2 SUBSTRATES INAN ULTRAHIGH-VACUUM SYSTEM [J].
SLOOPE, BW ;
TILLER, CO .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3174-&
[8]  
STALL RA, 1980, THESIS CORNELL U ITH
[9]  
WOOD CEC, 1978, ST LOUIS I PHYS C SE, V45
1