NEAR-INFRARED ABSORPTION BANDS IN IRRADIATED SILICON CRYSTALS

被引：0

作者：

LOTKOVA, EN

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1964年 / 6卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1500 / +

页数：1

共 9 条

[1]

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[2] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

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RAMDAS, AK .

[3] ELECTRON BOMBARDMENT OF SILICON [J].

HILL, DE .

PHYSICAL REVIEW, 1959, 114 (06) :1414-1420

[4] RADIATION-INDUCED ENERGY LEVELS IN SILICON [J].

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[5]

KURSKII YA, 1964, FIZ TVERD TELA, V6, P1485

[6]

LOTKOVA EN, 1962, OPT SPEKTROSK+, V13, P216

[7]

LOTKOVA EN, 1964, FIZ TVERD TELA, V6, P1905

[8]

VAVILOV VS, 1959, FIZ TVERD TELA, V1, P976

[9] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW ;

WALKER, RM .