Preparation and Characterization of Tin Oxide Nanowires

被引:7
|
作者
Kabiri, A. [1 ]
Nabiyouni, G. [1 ]
Boroujerdian, P. [2 ]
Ghasemi, J. [1 ]
Fattahi, A. [3 ]
机构
[1] Arak Univ, Fac Sci, Dept Phys, Arak 3815688349, Iran
[2] Malek E Ashtar Tech Univ, Fac Ineffect Def, Tehran, Iran
[3] Islamic Azad Univ, Dept Phys, North Tehran Branch, Tehran, Iran
关键词
SnO2; Nanowires; VLS mechanism; Thermal chemical reaction;
D O I
10.7508/jns.2013.04.006
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD) method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM), EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm. 2014 JNS All rights reserved
引用
收藏
页码:421 / 428
页数:8
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