CHARACTERIZATION OF GAAS DEVICES USING THE FRANZ-KELDYSH EFFECT

被引：0

作者：

ROUSH, RA ^{[1
]}

STOUDT, DC ^{[1
]}

SCHOENBACH, KH ^{[1
]}

KENNEY, JS ^{[1
]}

机构：

[1] OLD DOMINION UNIV,PHYS ELECTR RES INST,NORFOLK,VA 23529

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Franz-Keldysh electro-absorption effect has been used to characterize diffusion profiles as well as electrical effects in GaAs. In the presence of strong electric fields, the absorption edge of GaAs shifts to longer wavelengths. Therefore, the transmission through the semiconductor (with electric field applied) can be monitored in order to determine the spatial distribution of the electric field. We have investigated two uses of this technique which involve (1) creating a p-n junction and observing the transverse band-edge light transmission in order to observe diffusion profiles, and (2) probing semiconductor devices to characterize electric field distributions.

引用

页码：783 / 788

页数：6

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