EXCITONIC TRANSITIONS IN GAINAS/GAAS SURFACE QUANTUM-WELLS

被引：0
|
作者：
DREYBRODT, J
FORCHEL, A
REITHMAIER, JP
机构：
[1] Univ of Wuerzburg, Wuerzburg
来源：
JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期
关键词：
D O I：
10.1051/jp4:1993552
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the influence of the surface on the optical properties of GaInAs/GaAs quantum wells for various top barrier thicknesses. A blue shift of the emission lines up to about 25 meV combined with a line broadening is observed for a 5 nm thick surface quantum well (20% In) without any GaAs coverage. The line broadening as well as the energy shift depend strongly on the quantum well thickness. This can be modeled by assuming a 5 eV vacuum potential at the surface.
引用
收藏
页码：265 / 268
页数：4
相关论文
共 50 条
  • [1] INDIUM INCORPORATION IN GAINAS/GAAS QUANTUM-WELLS GROWN ON GAAS
    WOODBRIDGE, K
    MOORE, KJ
    ANDREW, NL
    FEWSTER, PF
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 339 - 343
  • [2] NOVEL EXCITONIC TRANSITIONS IN N-TYPE GAAS/ALGAAS QUANTUM-WELLS
    HOLTZ, PO
    ZHAO, QX
    BERGMAN, JP
    MONEMAR, B
    WILLANDER, M
    CAMPMAN, K
    SUNDARAM, M
    MERZ, JL
    GOSSARD, AC
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (04) : 389 - 392
  • [3] QUENCHING OF EXCITONIC OPTICAL-TRANSITIONS BY EXCESS ELECTRONS IN GAAS QUANTUM-WELLS
    SHIELDS, AJ
    PEPPER, M
    RITCHIE, DA
    SIMMONS, MY
    JONES, GAC
    PHYSICAL REVIEW B, 1995, 51 (24): : 18049 - 18052
  • [4] INDIUM SURFACE SEGREGATION IN STRAINED GAINAS QUANTUM-WELLS GROWN ON GAAS BY MBE
    NAGLE, J
    LANDESMAN, JP
    LARIVE, M
    MOTTET, C
    BOIS, P
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 550 - 554
  • [5] NONLINEAR EXCITONIC OPTICAL-ABSORPTION IN GAINAS/INP QUANTUM-WELLS
    FOX, AM
    MACIEL, AC
    SHORTHOSE, MG
    RYAN, JF
    SCOTT, MD
    DAVIES, JI
    RIFFAT, JR
    APPLIED PHYSICS LETTERS, 1987, 51 (01) : 30 - 32
  • [6] EXCITONIC TRANSITIONS IN INGAP/INALGAP STRAINED QUANTUM-WELLS
    SCHNEIDER, RP
    BRYAN, RP
    JONES, ED
    LOTT, JA
    APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1240 - 1242
  • [7] EMISSION-SPECTRA AND LIFETIMES OF NEAR-SURFACE GAINAS/GAAS QUANTUM-WELLS
    DREYBRODT, J
    DAIMINGER, F
    REITHMAIER, JP
    FORCHEL, A
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 221 - 226
  • [8] PHOTOCONDUCTIVITY INVESTIGATION OF THE EXCITONIC AUGER RECOMBINATION IN GAAS/ALGAAS QUANTUM-WELLS
    FERREIRA, AC
    HOLTZ, PO
    MONEMAR, B
    SUNDARAM, M
    MERZ, JL
    GOSSARD, AC
    APPLIED PHYSICS LETTERS, 1994, 65 (06) : 720 - 721
  • [9] SPIN RELAXATION IN INTRINSIC GAAS QUANTUM-WELLS - INFLUENCE OF EXCITONIC LOCALIZATION
    MUNOZ, L
    PEREZ, E
    VINA, L
    PLOOG, K
    PHYSICAL REVIEW B, 1995, 51 (07) : 4247 - 4257
  • [10] DYNAMICS OF EXCITONIC PHOTOLUMINESCENCE LINESHAPE IN NARROW GAAS SINGLE QUANTUM-WELLS
    FUJIWARA, K
    CINGOLANI, R
    PLOOG, K
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 307 - 310
12345