ANNEALING EFFECTS ON ELECTRON-DRIFT MOBILITY IN HYDROGENATED AMORPHOUS-SILICON

被引：2
作者：
YOON, JH
LEE, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期
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D O I：
10.1063/1.335347
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：4808 / 4810
页数：3
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