TRAPS IN FAST-NEUTRON IRRADIATED GAAS SCHOTTKY DIODES

被引：5
作者：
JUDMAN, JE
NOWAK, WB
机构：
[1] USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01731
[2] NORTHEASTERN UNIV,BOSTON,MA 02115
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 09期
关键词：
D O I：
10.1016/0038-1101(76)90154-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：759 / 767
页数：9
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