THERMAL ANNEALING OF IRRADIATED N-ON-P SILICON SOLAR CELLS

被引:0
|
作者
TAUKE, RV
机构
来源
REPORT OF NRL PROGRESS | 1965年 / DEC期
关键词
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:1 / &
相关论文
共 50 条
  • [21] Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells
    Kind, R.
    van Swaaij, R. A. C. M. M.
    Rubinelli, F. A.
    Solntsev, S.
    Zeman, M.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (10)
  • [22] Silicon Solar Cells with Vertical p-n Junctions for Hybrid Solar Cells
    Malyutina-Bronskaya, Viktoria V.
    Zalesskii, Valeryi B.
    Konoiko, Aleksey I.
    Malyshev, Victor S.
    2015 16TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2015, : 87 - 89
  • [23] Cathodoluminescence Study of Irradiated p+n GaAs Solar Cells
    Warner, Jeffrey H.
    Messenger, Scott R.
    Walters, Robert J.
    Hoheisel, Raymond
    Romero, Manuel J.
    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 2816 - 2820
  • [24] Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
    Bomben, Marco
    Bagolini, Alvise
    Boscardin, Maurizio
    Bosisio, Luciano
    Calderini, Giovanni
    Chauveau, Jacques
    Giacomini, Gabriele
    La Rosa, Alessandro
    Marchiori, Giovanni
    Zorzi, Nicola
    2013 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2013,
  • [25] Annealing studies of boron implanted emitters for n-silicon solar cells
    Liang, Peng
    Han, Peide
    Fan Yujie
    Xing, Yupeng
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (03)
  • [26] Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure
    Song, M.
    Wu, Z.
    Fang, Y.
    Xiang, R.
    Sun, Y.
    Wang, H.
    Yu, C.
    Xiong, H.
    Dai, J.
    Chen, C.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (07): : 1452 - 1456
  • [27] Effect of rapid thermal annealing on the characteristics of amorphous carbon/n-type crystalline silicon heterojunction solar cells
    Ismail, Raid A.
    Hamoudi, Walid K.
    Saleh, Kifah K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 21 : 194 - 199
  • [28] EFFECTS OF ELECTRON IRRADIATION ON N ON P SILICON SOLAR CELLS
    LUFT, W
    IEEE TRANSACTIONS ON AEROSPACE, 1964, AS 2 (02): : 747 - &
  • [29] Effects of high temperature annealing of aluminum at the back of n+-p-p+ silicon solar cells upon their spectral and electrical characteristics
    Morales-Acevedo, A
    Santana, G
    Martel, A
    Hernández, L
    SOLID-STATE ELECTRONICS, 1999, 43 (11) : 2075 - 2079
  • [30] Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+-p structures
    Makarenko, L. F.
    Lastovskii, S. B.
    Korshunov, F. P.
    Moll, M.
    Pintilie, I.
    Abrosimov, N. V.
    INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 2014, 1583 : 123 - 126