共 26 条
EFFECT OF BIAS ON THE RESPONSE OF METAL-OXIDE-SEMICONDUCTOR DEVICES TO LOW-ENERGY X-RAY AND CO-60 IRRADIATION
被引:29
作者:

FLEETWOOD, DM
论文数: 0 引用数: 0
h-index: 0
机构:
USN,RES LAB,WASHINGTON,DC 20375 USN,RES LAB,WASHINGTON,DC 20375

WINOKUR, PS
论文数: 0 引用数: 0
h-index: 0
机构:
USN,RES LAB,WASHINGTON,DC 20375 USN,RES LAB,WASHINGTON,DC 20375

DOZIER, CM
论文数: 0 引用数: 0
h-index: 0
机构:
USN,RES LAB,WASHINGTON,DC 20375 USN,RES LAB,WASHINGTON,DC 20375

BROWN, DB
论文数: 0 引用数: 0
h-index: 0
机构:
USN,RES LAB,WASHINGTON,DC 20375 USN,RES LAB,WASHINGTON,DC 20375
机构:
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词:
D O I:
10.1063/1.99116
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
引用
收藏
页码:1514 / 1516
页数:3
相关论文
共 26 条
- [1] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1318 - 1323BENEDETTO, JM论文数: 0 引用数: 0 h-index: 0BOESCH, HE论文数: 0 引用数: 0 h-index: 0
- [2] VARIATIONS IN SEMICONDUCTOR-DEVICE RESPONSE IN A MEDIUM-ENERGY X-RAY DOSE-ENHANCING ENVIRONMENT[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1544 - 1550BEUTLER, DE论文数: 0 引用数: 0 h-index: 0FLEETWOOD, DM论文数: 0 引用数: 0 h-index: 0BEEZHOLD, W论文数: 0 引用数: 0 h-index: 0KNOTT, D论文数: 0 引用数: 0 h-index: 0LORENCE, LJ论文数: 0 引用数: 0 h-index: 0DRAPER, BL论文数: 0 引用数: 0 h-index: 0
- [3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167BOESCH, HE论文数: 0 引用数: 0 h-index: 0机构: HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA HARRY DIAMOND LABS, ADELPHIA, MD 20782 USAMCLEAN, FB论文数: 0 引用数: 0 h-index: 0机构: HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA HARRY DIAMOND LABS, ADELPHIA, MD 20782 USAMCGARRITY, JM论文数: 0 引用数: 0 h-index: 0机构: HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA HARRY DIAMOND LABS, ADELPHIA, MD 20782 USAAUSMAN, GA论文数: 0 引用数: 0 h-index: 0机构: HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
- [4] PHOTOELECTRON EFFECTS ON THE DOSE DEPOSITED IN MOS DEVICES BY LOW-ENERGY X-RAY SOURCES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1465 - 1468BROWN, DB论文数: 0 引用数: 0 h-index: 0
- [5] THE PHENOMENON OF ELECTRON ROLLOUT FOR ENERGY DEPOSITION AND DEFECT GENERATION IN IRRADIATED MOS DEVICES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1240 - 1244BROWN, DB论文数: 0 引用数: 0 h-index: 0
- [6] ELECTRON-HOLE RECOMBINATION IN IRRADIATED SIO2 FROM A MICRODOSIMETRY VIEWPOINT[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4142 - 4144BROWN, DB论文数: 0 引用数: 0 h-index: 0DOZIER, CM论文数: 0 引用数: 0 h-index: 0
- [7] THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4382 - 4387DOZIER, CM论文数: 0 引用数: 0 h-index: 0BROWN, DB论文数: 0 引用数: 0 h-index: 0
- [8] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4137 - 4141DOZIER, CM论文数: 0 引用数: 0 h-index: 0BROWN, DB论文数: 0 引用数: 0 h-index: 0
- [9] AN EVALUATION OF LOW-ENERGY X-RAY AND CO-60 IRRADIATIONS OF MOS-TRANSISTORS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1535 - 1539DOZIER, CM论文数: 0 引用数: 0 h-index: 0机构: SANDIA NATL LABS,ALBUQUERQUE,NM 87185 SANDIA NATL LABS,ALBUQUERQUE,NM 87185FLEETWOOD, DM论文数: 0 引用数: 0 h-index: 0机构: SANDIA NATL LABS,ALBUQUERQUE,NM 87185 SANDIA NATL LABS,ALBUQUERQUE,NM 87185BROWN, DB论文数: 0 引用数: 0 h-index: 0机构: SANDIA NATL LABS,ALBUQUERQUE,NM 87185 SANDIA NATL LABS,ALBUQUERQUE,NM 87185WINOKUR, PS论文数: 0 引用数: 0 h-index: 0机构: SANDIA NATL LABS,ALBUQUERQUE,NM 87185 SANDIA NATL LABS,ALBUQUERQUE,NM 87185
- [10] PHOTON ENERGY-DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1694 - 1699DOZIER, CM论文数: 0 引用数: 0 h-index: 0BROWN, DB论文数: 0 引用数: 0 h-index: 0