STUDIES OF RECOMBINATION ENHANCED DEFECT MOTION IN III-V SEMICONDUCTORS

被引：1
作者：
LANG, DV [1 ]
KIMERLING, LC [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期
关键词：
D O I：
10.1109/T-ED.1975.18274
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1054 / 1054
页数：1
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