Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

被引：0
作者：
Liu Hongxia [1 ]
Zhang Heming [1 ]
Zhang Zhiyong [2 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China
[2] Northwest Univ, Inst Informat Sci & Technol, Xian 710069, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 05期
关键词：
carbon/silicon carbide nanotube heterojunction; nonequilibrium Greens function; transport properties;
D O I：
10.1088/1674-4926/30/5/052002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A two-probe system of the heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) was established based on its optimized structure. By using a method combining nonequilibrium Greens function (NEGF) with density functional theory (DFT), the transport properties of the heterojunction were investigated. Our study reveals that the highest occupied molecular orbital (HOMO) has a higher electron density on the CNT section and the lowest unoccupied molecular orbital (LUMO) mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are +1.8 and -2.2 V, respectively
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页数：4
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