Formation of beta-Si3N4 by nitrogen implantation into SiC

被引：19

作者：

Miyagawa, S ^{[1
]}

Nakao, S ^{[1
]}

Saitoh, K ^{[1
]}

Ikeyama, M ^{[1
]}

Niwa, H ^{[1
]}

Tanemura, S ^{[1
]}

Miyagawa, Y ^{[1
]}

Baba, K ^{[1
]}

机构：

[1] TECHNOL CTR NAGASAKI,OHMURA,NAGASAKI 856,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.360470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline beta-SiC samples were implanted with 50 keV N-15 ions with fluences ranging from 3 x 10(17) to 1.5 x 10(18) ions/cm(2) at elevated temperature up to 1100 degrees C. Nitrogen depth profiles were measured as a function of implantation temperature and annealing temperature using nuclear reaction analysis, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. It was found that the maximum concentration and the width of nitrogen depth profiles implanted at 1100 degrees C were reduced distinctly in comparison with the profiles implanted below 930 degrees C or annealed at 1100 degrees C. The redistribution of nitrogen implanted in SiC at 1100 degrees C was ascribed to the formation of beta-Si3N4 crystallites in SiC, which was confirmed by x-ray diffraction at glancing incidence. (C) 1995 American Institute of Physics.

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页码：7018 / 7021

页数：4

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