CHARACTERIZATION OF REACTIVELY SPUTTERED SILICON-NITRIDE

被引：10

作者：

MATSUZAKI, K

HIRABAYASHI, A

SAGA, M

机构：

[1] Fuji Electric Corporate Research and Development, Ltd., Advanced Device Technology Laboratory

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 11期

关键词：

electric breakdown MOSFET; etching; nitrogen compounds passivation; refractive index; silicon compounds; sputter deposition; thermal stresses; thin films;

D O I：

10.1149/1.2069063

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The properties of silicon nitride films, formed by the reactive sputtering of a silicon target using various gas flow ratios, are presented. The variation in physical, optical, and electrical properties of this silicon nitride (Si(x) N(y)) series is examined. The electrical properties of these films on Si wafers are examined and compared with those of other silicon nitride films. The potential of passivating electronic devices with the films is investigated.

引用

页码：3259 / 3263

页数：5