A NEW MEASUREMENT METHOD OF MOS-TRANSISTOR PARAMETERS

被引：14
作者：
CIOFI, C [1 ]
MACUCCI, M [1 ]
PELLEGRINI, B [1 ]
机构：
[1] SCUOLA SUPER SANT ANNA, I-56127 PISA, ITALY
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 08期
关键词：
D O I：
10.1016/0038-1101(90)90221-Y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for the extraction of some of the main physical parameters characterizing an MOS process is presented. This method requires current measurements for small drain voltages to be performed at least on two transistors which differ only for the channel length. In particular it makes it possible to determine the threshold voltage, the channel shortening, the drain and source parasitic resistances and the carrier mobility in the channel. The method is primarily intended for usage with a computerized measuring system. © 1990.
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收藏
页码：1065 / 1069
页数：5
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