THERMAL ANNEALING BEHAVIOR OF SI/SIO2 STRUCTURES

被引：13

作者：

LIFSHITS, VG

KAVERINA, IG

KOROBTSOV, VV

SARANIN, AA

ZOTOV, AV

机构：

来源：

THIN SOLID FILMS | 1986年 / 135卷 / 01期

关键词：

D O I：

10.1016/0040-6090(86)90092-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：99 / 105

页数：7

共 16 条

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[12]

SHEKOCHIHIN VM, 1968, SOV PHYS SEMICOND, V2, P648

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FAN, JCC ;

GEIS, MW ;

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MOUNTAIN, RW .

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[16] COMPETING PROCESSES OF SI MOLECULAR-BEAM REACTIVE ETCHING AND SIMULTANEOUS DEPOSITION ON FILM AND BULK SIO2 [J].

YONEHARA, T ;

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MIYAZAWA, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6839-6843

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