EFFECT OF 1/F-TYPE FM NOISE ON SEMICONDUCTOR-LASER LINEWIDTH RESIDUAL IN HIGH-POWER LIMIT

被引:137
作者
KIKUCHI, K
机构
[1] Univ of Tokyo, Dep of Electronics, Engineering, Tokyo, Jpn
关键词
Frequency Modulation - Noise; Spurious Signal--Spectrum Analysis - Optical Communication;
D O I
10.1109/3.17331
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The FM-noise spectrum and the linewidth of 1.3-μm DFB (distributed feedback) semiconductor lasers measured in the high-power state up to 20 mW are discussed. A 5-MHz residual linewidth is observed in the high-power limit. The FM-noise spectrum consists of white noise and 1/f noise. The spectral density of the white noise is reduced by the increase in the output power, whereas that of the 1/f noise is unchanged, which means that the linewidth residual in the high-power limit is caused by the 1/f noise rather than the white noise. The impact of the 1/f-type FM noise on coherent optical communication systems is also discussed.
引用
收藏
页码:684 / 688
页数:5
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