IRRADIATION-INDUCED DEFECTS IN GAAS

被引：423
作者：
PONS, D
BOURGOIN, JC
机构：
[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
[2] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 20期
关键词：
D O I：
10.1088/0022-3719/18/20/012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3839 / 3871
页数：33
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