COMPOSITIONAL CHANGES IN SURFACE REGION OF SIC SINGLE-CRYSTAL DUE TO HYDROGEN AND HELIUM ION IRRADIATION

被引：6

作者：

FUKUDA, S

MOHRI, M

YAMASHINA, T

机构：

来源：

FUSION TECHNOLOGY | 1984年 / 6卷 / 02期

关键词：

D O I：

10.13182/FST84-A23216

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：420 / 423

页数：4

共 12 条

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[9] SPUTTERING PROCESS OF A SILICON-CARBIDE SURFACE WITH ENERGETIC IONS BY MEANS OF AN AES-SIMS-FDS COMBINED SYSTEM [J].

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