COMPARISON BETWEEN THE ADSPACE AND CLUSTER-EXTENDED GREEN-FUNCTION TECHNIQUES FOR LOCALIZED DEFECTS

被引：4
作者：
BARAFF, GA
SCHLUTER, M
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.30.3456
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：3456 / 3459
页数：4
相关论文
共 11 条
[1]   CLUSTER-EXTENDED GREENS-FUNCTION FOR ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M ;
ALLAN, G .
PHYSICAL REVIEW B, 1983, 27 (02) :1010-1016
[2]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[3]   MIGRATION OF INTERSTITIALS IN SILICON [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469
[4]   THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].
BARAFF, GA ;
SCHLUTER, M ;
ALLAN, G .
PHYSICAL REVIEW LETTERS, 1983, 50 (10) :739-742
[5]  
BARAFF GA, 1983, PHYS REV B, V28, P2302
[6]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[7]   THEORY OF SCATTERING IN SOLIDS [J].
CALLAWAY, J .
JOURNAL OF MATHEMATICAL PHYSICS, 1964, 5 (06) :783-&
[8]   LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J].
JAROS, M ;
BRAND, S .
PHYSICAL REVIEW B, 1976, 14 (10) :4494-4505
[9]   WAVE FUNCTIONS FOR IMPURITY LEVELS [J].
KOSTER, GF ;
SLATER, JC .
PHYSICAL REVIEW, 1954, 95 (05) :1167-1176
[10]   QUASI BANDS IN GREENS-FUNCTION DEFECT MODELS [J].
LINDEFELT, U ;
ZUNGER, A .
PHYSICAL REVIEW B, 1981, 24 (10) :5913-5931
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