FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES

被引：32

作者：

DYLEWSKI, J ^{[1
]}

JOSHI, MC ^{[1
]}

机构：

[1] UNIV BOMBAY,DEPT PHYS,BOMBAY,INDIA

来源：

关键词：

D O I：

10.1016/0040-6090(76)90199-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：327 / 336

页数：10

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[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[5] DEARNALEY G., 1973, ION IMPLANTATION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 326 - +
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[9] HOWARTH CE, 1961, J AM CERAM SOC, V44, P26
[10] Nyquist RA, 1971, VIB SPECTROSC, DOI [10.1016/C2009-0-22109-X, DOI 10.1016/C2009-0-22109-X]