GAAS CLEANING WITH A HYDROGEN RADICAL BEAM GUN IN AN ULTRAHIGH-VACUUM SYSTEM

被引：100
作者：
SUGATA, S [1 ]
TAKAMORI, A [1 ]
TAKADO, N [1 ]
ASAKAWA, K [1 ]
MIYAUCHI, E [1 ]
HASHIMOTO, H [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584302
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1087 / 1091
页数：5
相关论文
共 23 条
[1]   DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J].
ASAKAWA, K ;
SUGATA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :677-680
[2]  
ASAKAWA K, 1986, I PHYS C SER, V79, P373
[3]  
ASAKAWA K, 1986, 18TH C SOL STAT DEV, P129
[4]   SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE [J].
BACHRACH, RZ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :115-144
[5]   HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J].
CHANG, RPH ;
CHANG, CC ;
DARACK, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :45-50
[6]   INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].
CHO, AY ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817
[7]   INSITU CHEMICAL ETCHING OF GAAS(001) AND INP(001) SUBSTRATES BY GASEOUS HCL PRIOR TO MOLECULAR-BEAM EPITAXY GROWTH [J].
CONTOUR, JP ;
MASSIES, J ;
SALETES, A ;
OUTREQUIN, M ;
SIMONDET, F ;
ROCHETTE, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :730-733
[8]   X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACE THERMOCLEANING PRIOR TO MOLECULAR-BEAM EPITAXY [J].
CONTOUR, JP ;
MASSIES, J ;
SALETES, A ;
STAIB, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (01) :45-47
[9]   CHARACTERIZATION OF PHOTOCHEMICAL PROCESSING [J].
HIROSE, M ;
YOKOYAMA, S ;
YAMAKAGE, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1445-1449
[10]   AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON OZONE TREATED GAAS-SURFACES [J].
INGREY, S ;
LAU, WM ;
MCINTYRE, NS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :984-988
123