EFFECT OF EXCITED-OXYGEN EXPOSURES ON SPECTRA AND TRANSITION DENSITY OF STATES FOR CLEAVED SI(111) FROM L1L2,3V AND L2,3VV AUGER TRANSITIONS

被引:6
作者
BROCKMAN, RH
RUSSELL, GJ
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 32期
关键词
D O I
10.1088/0022-3719/15/32/028
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:6677 / 6688
页数:12
相关论文
共 30 条
[1]   SURFACE VALENCE BAND AND PLASMON FEATURES ON CLEAN CLEAVED SILICON [J].
ARNOTT, DR ;
HANEMAN, D .
SURFACE SCIENCE, 1974, 45 (01) :128-140
[2]   AUGER SPECTROSCOPY OF SILICON [J].
BISHOP, HE ;
RIVIERE, JC ;
TAYLOR, NJ .
SURFACE SCIENCE, 1969, 17 (02) :462-&
[3]   DENSITY OF STATES FOR CLEAVED SI (111) FROM L1L2,3V AND L2,3VV AUGER-SPECTRA [J].
BROCKMAN, RH ;
RUSSELL, GJ .
PHYSICAL REVIEW B, 1980, 22 (12) :6302-6307
[4]  
BROCKMAN RH, 1981, PHYS REV B, V24, P3667, DOI 10.1103/PhysRevB.24.3667
[5]   EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J].
CARRIERE, B ;
DEVILLE, JP .
SURFACE SCIENCE, 1979, 80 (01) :278-286
[6]   THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J].
CHEN, M ;
BATRA, IP ;
BRUNDLE, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1216-1220
[7]   CHARACTERISTIC ENERGIES IN SECONDARY ELECTRON SPECTRA FROM SI(111) SURFACES [J].
CHUNG, MF ;
JENKINS, LH .
SURFACE SCIENCE, 1971, 26 (02) :649-&
[8]  
EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[9]   PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS [J].
GARNER, CM ;
LINDAU, I ;
MILLER, JN ;
PIANETTA, P ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :372-375
[10]   ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J].
GARNER, CM ;
LINDAU, I ;
SU, CY ;
PIANETTA, P ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 19 (08) :3944-3956