THERMALLY STIMULATED PERSISTENT CONDUCTIVITY IN N-ALGAAS GAAS HETEROSTRUCTURES

被引：2

作者：

LEYBOVICH, IS ^{[1
]}

RODE, DL ^{[1
]}

DAVIS, GA ^{[1
]}

机构：

[1] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：939 / 941

页数：3

共 14 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .1. SELF-CONSISTENT CALCULATION OF SUBBAND STRUCTURE AND OPTICAL-SPECTRA
ANDO, T
MORI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (05) : 1518 - 1527
[3] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3893 - 3899
[4] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
DELAGEBEAUDEUF, D
LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[6] MODULATION-DOPED (AL,GA)AS/ALAS SUPERLATTICE - ELECTRON-TRANSFER INTO ALAS
DRUMMOND, TJ
FRITZ, IJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 284 - 286
[7] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING
KROEMER, H
CHIEN, WY
HARRIS, JS
EDWALL, DD
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297
[8] LEYBOVICH IS, 1986, THESIS WASHINGTON U
[9] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE
MORI, S
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) : 865 - 873
[10] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS
NELSON, RJ
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 351 - 353

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