DOPANT INCORPORATION STUDIES IN SILICON MOLECULAR-BEAM EPITAXY (SI MBE)

被引：11

作者：

ALLEN, FG

IYER, SS

METZGER, RA

机构：

来源：

APPLICATIONS OF SURFACE SCIENCE | 1982年 / 11-2卷 / JUL期

关键词：

D O I：

10.1016/0378-5963(82)90096-4

中图分类号：

学科分类号：

摘要：

引用

页码：517 / 527

页数：11

共 11 条

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BEAN, JC .

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[3]

CHO AY, 1975, PROGR SOLID STATE CH, pCH10

[4] STUDY OF PHOSPHORUS ADSORPTION AND DESORPTION KINETICS ON SILICON (111) SURFACES [J].

DAVIS, LE ;

MELLES, JJ ;

LEVENSON, LL .

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[5] WORK FUNCTION VARIATION OF METALS COATED BY METALLIC FILMS [J].

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LEVINE, JD .

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[6]

HONIG RE, 1969, RCA REV, V30, P285

[7] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

IYER, SS ;

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613

[8] SI-MBE - GROWTH AND SB DOPING [J].

KONIG, U ;

KIBBEL, H ;

KASPER, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04) :985-989

[9]

METZGER RA, 1980, THESIS UCLA

[10] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J].

MILLER, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) :1103-&

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