GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS

被引：247

作者：

TSUKADA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.1663151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4899 / 4906

页数：8

共 15 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].

AFROMOWITZ, MA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1292-1294

[2]

[Anonymous], 1969, FIZ TEKHNIKA POLUPRO

[3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J].

DELOACH, BC ;

HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044

[4] OPTIMUM STRIP WIDTH FOR CONTINUOUS OPERATION OF GAAS JUNCTION LASERS [J].

DYMENT, JC ;

RIPPER, JE ;

ZACHOS, TH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1802-+

[5]

Eliseev P. G., 1973, Journal of Luminescence, V7, P338, DOI 10.1016/0022-2313(73)90074-4

[6] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

HAYASHI, I ;

PANISH, MB ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&

[7]

HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[8]

ITO R, UNPUBLISHED

[9]

JENKINS FA, 1957, FUNDAMENTALS OPTICS, P359

[10]

NAKAMURA S, PRIVATE COMMUNICATIO

← 1 2 →