THE PHASE-COMPOSITION OF SIOX FILMS

被引：15
作者：
DVURECHENSKY, AV
EDELMAN, FL
RYAZANTSEV, IA
机构：
来源：
THIN SOLID FILMS | 1982年 / 91卷 / 01期
关键词：
D O I：
10.1016/0040-6090(82)90127-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：L55 / L57
页数：3
相关论文
共 8 条
[1]   ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].
BRODSKY, MH ;
TITLE, RS .
PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&
[2]  
CRISOM DL, 1974, SOLID STATE COMMUN, V15, P479
[3]  
GINOVKER AS, 1980, 7TH T ALL UN C EL PR, P270
[4]   CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].
HAMASAKI, M ;
ADACHI, T ;
WAKAYAMA, S ;
KIKUCHI, M .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992
[5]  
HARSTEIN A, 1980, APPL PHYS LETT, V36, P836
[6]   ELECTRON-SPIN RESONANCE AND HOPPING CONDUCTIVITY OF A-SIOX [J].
HOLZENKAMPFER, E ;
RICHTER, FW ;
STUKE, J ;
VOGETGROTE, U .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :327-338
[7]   VARIATION OF SEMICONDUCTOR PROPERTIES THROUGH THE SIOX REGION OF SI - SIO2 INTERFACES [J].
HUBNER, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :1011-1014
[8]  
VERGI UP, 1979, 11TH P C EL MICR MOS, V1, P101
1