1.5-W CW S-BAND GAINP/GAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：10
作者：
LIU, W
BEAM, E
KHATIBZADEH, A
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 06期
关键词：
D O I：
10.1109/55.286696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first large-signal power result from a double heterojunction bipolar transistor (DHBT) based on the CaInP/GaAs/GaInP material system. A CW output power of 1.51 W and a power added efficiency of 52% were achieved at 3 GHz. Because the GaInP collector has a relatively high bandgap of 1.89 eV, high dc bias voltage operation with collector bias extending to 20 V (for a 40-V swing) is possible in this GaInP/GaAs/GaInP DHBT. This high dc bias voltage operation represents a unique advantage over the more conventional AlGaAs/GaAs HBT.
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页码：215 / 217
页数：3
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