PROCESSING HIGH-PURITY SILICON USED FOR SENSOR APPLICATIONS

被引:4
作者
TENKATE, WRT [1 ]
AUDET, SA [1 ]
机构
[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,2600 GA DELFT,NETHERLANDS
来源
SENSORS AND ACTUATORS | 1989年 / 16卷 / 03期
关键词
D O I
10.1016/0250-6874(89)87010-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:287 / 298
页数:12
相关论文
共 17 条
[1]   OPTIMIZATION OF DIODE STRUCTURES FOR MONOLITHIC INTEGRATED MICROWAVE CIRCUITS [J].
BATTERSHALL, BW ;
EMMONS, SP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (02) :107-+
[2]   SILICON HIGH-RESISTIVITY-SUBSTRATE MILLIMETER-WAVE TECHNOLOGY [J].
BUECHLER, J ;
KASPER, E ;
RUSSER, P ;
STROHM, KM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) :2047-2052
[4]   FABRICATION OF LOW-NOISE SILICON RADIATION DETECTORS BY THE PLANAR PROCESS [J].
KEMMER, J .
NUCLEAR INSTRUMENTS & METHODS, 1980, 169 (03) :499-502
[5]  
KEMMER J, 1982, IEEE T NUCL SCI, V29, P234
[6]   THE EFFECT OF THERMAL AND RADIATION DEFECTS ON THE RECOMBINATION PROPERTIES OF THE BASE REGION OF DIFFUSED SILICON P-N STRUCTURES [J].
KUCHINSKII, PV ;
LOMAKO, VM .
SOLID-STATE ELECTRONICS, 1986, 29 (10) :1041-1051
[7]   THE ANNEALING OF 1-MEV IMPLANTATIONS OF BORON IN SILICON [J].
OOSTERHOFF, S ;
MIDDELHOEK, J .
SOLID-STATE ELECTRONICS, 1985, 28 (05) :427-433
[8]  
ROSS B, 1980, ASTM STP AM SOC TEST, V712, P14
[9]  
Ryssel H., 1978, IONENIMPLANTATION
[10]   THE CONCEPT OF GENERATION AND RECOMBINATION LIFETIMES IN SEMICONDUCTORS [J].
SCHRODER, DK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1336-1338