DYNAMIC PERFORMANCE OF MODIFIED FIELD-EFFECT TRANSISTOR

被引：0

作者：

KHAN, AA ^{[1
]}

SINGH, L ^{[1
]}

机构：

[1] AN COLL,DEPT PHYS,PATNA 800013,INDIA

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1984年 / 22卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：565 / 566

页数：2

共 50 条

[1] OPTIMIZING THE PERFORMANCE OF MODIFIED FIELD-EFFECT TRANSISTOR
KHAN, AA
SINGH, L
INTERNATIONAL JOURNAL OF ELECTRONICS, 1987, 62 (03) : 435 - 440
[2] IMPROVED PERFORMANCE OF A FIELD-EFFECT TRANSISTOR
MUZUMDAR, P
MIRCHANDANI, K
TRUSELL, F
DROZNIN, V
MILSHTEIN, S
SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (04) : 357 - 359
[3] DC MODELING OF MODIFIED FIELD-EFFECT TRANSISTOR
ALAKHRAS, MA
KHAN, AA
ALAMOUD, AM
INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (03) : 417 - 424
[4] DYNAMIC PROPERTIES OF A BALLISTIC FIELD-EFFECT TRANSISTOR
MANTOROV, VV
SUKHANOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (08): : 882 - 886
[5] FIELD-EFFECT TRANSISTOR
GULDENPFENNIG, P
ELEKTROTECHNISCHE ZEITSCHRIFT B-AUSGABE, 1968, 20 (17): : 474 - +
[6] PERFORMANCE AND OPTIMIZATION OF DIPOLE HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR
ZOU, JP
DONG, HZ
GOPINATH, A
SHUR, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) : 250 - 256
[7] Analysis of a modified recessed active tunneling field-effect transistor
Kim, HuiJung
Choi, Seongwook
Yoo, NakWon
Rhee, SeungMan
Lee, Myoung Jin
Park, Young June
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (07)
[8] FIELD-EFFECT MODIFIED TRANSISTOR - HIGH-RESPONSIVITY PHOTOSENSOR
NORDSTROM, RA
MEINDL, JD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 411 - +
[9] THE FIELD-EFFECT TRANSISTOR - A REVIEW
WALLMARK, JT
RCA REVIEW, 1963, 24 (04): : 641 - 660
[10] ON FIELD-EFFECT TRANSISTOR CHARACTERISTICS
WEDLOCK, BD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (03) : 181 - &

← 1 2 3 4 5 →