A KINETICS STUDY OF THE ATMOSPHERIC-PRESSURE CVD REACTION OF SILANE AND NITROUS-OXIDE

被引：25
作者：
CHAPPLESOKOL, JD
GIUNTA, CJ
GORDON, RG
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期
关键词：
D O I：
10.1149/1.2096390
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：2993 / 3003
页数：11
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共 41 条
[21]   OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].
LUCOVSKY, G ;
YANG, J ;
CHAO, SS ;
TYLER, JE ;
CZUBATYJ, W .
PHYSICAL REVIEW B, 1983, 28 (06) :3225-3233
[22]   THE DECOMPOSITION KINETICS OF DISILANE AND THE HEAT OF FORMATION OF SILYLENE [J].
MARTIN, JG ;
RING, MA ;
ONEAL, HE .
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1987, 19 (08) :715-724
[23]   SILICON HETEROJUNCTION TRANSISTOR [J].
MATSUSHITA, T ;
OHUCHI, N ;
HAYASHI, H ;
YAMOTO, H .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :549-550
[24]   DENSIFICATION OF SIPOS [J].
MAXWELL, HR ;
KNOLLE, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :576-580
[25]  
MCGINN JT, 1979, APPL PHYS LETT, V34, P610
[26]   SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) FILMS APPLIED TO MOS INTEGRATED-CIRCUITS [J].
MOCHIZUKI, H ;
AOKI, T ;
YAMOTO, H ;
OKAYAMA, M ;
ABE, M ;
ANDO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :41-48
[27]   ANNEALING CHARACTERISTICS OF SI-RICH SIO2-FILMS [J].
NESBIT, LA .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :38-40
[28]   ON THE STRUCTURAL MODEL OF CVD A-SI-O-H FILMS [J].
OTS, K ;
SEILENTHAL, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :K109-K111
[29]  
PALMER BW, IN PRESS
[30]   OPTICAL PROPERTIES OF NON-CRYSTALLINE SI, SIO, SIOX AND SIO2 [J].
PHILIPP, HR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1935-&
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