A KINETICS STUDY OF THE ATMOSPHERIC-PRESSURE CVD REACTION OF SILANE AND NITROUS-OXIDE

被引：25
作者：
CHAPPLESOKOL, JD
GIUNTA, CJ
GORDON, RG
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期
关键词：
D O I：
10.1149/1.2096390
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2993 / 3003
页数：11
相关论文
共 41 条
[1]   ABSOLUTE RATE CONSTANTS FOR REACTIONS OF O(P-3) ATOMS AND OH RADICALS WITH SIH4 OVER TEMPERATURE-RANGE OF 297-438-DEGREES-K [J].
ATKINSON, R ;
PITTS, JN .
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1978, 10 (11) :1151-1160
[2]  
BAULCH DL, 1973, EVALUATED KINETIC DA, V2, P69
[3]  
BORISOV AA, 1977, KINET CATAL+, V18, P256
[4]  
CHAPPLESOKOL JD, 1988, THESIS HARVARD U CAM, pCH2
[5]   DUAL ELECTRON INJECTOR STRUCTURE [J].
DIMARIA, DJ ;
DONG, DW .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :61-64
[6]   ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE [J].
GATES, SM .
SURFACE SCIENCE, 1988, 195 (1-2) :307-329
[7]   CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].
HAMASAKI, M ;
ADACHI, T ;
WAKAYAMA, S ;
KIKUCHI, M .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992
[8]   OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS [J].
HARTSTEIN, A ;
TSANG, JC ;
DIMARIA, DJ ;
DONG, DW .
APPLIED PHYSICS LETTERS, 1980, 36 (10) :836-837
[9]   ATTENUATED TOTAL REFLECTANCE STUDY OF SILICON-RICH SILICON DIOXIDE FILMS [J].
HARTSTEIN, A ;
DIMARIA, DJ ;
DONG, DW ;
KUCZA, JA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3860-3862
[10]   SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT [J].
HITCHMAN, ML ;
WIDMER, AE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :501-509
12345