ANNEALING OF IRRADIATED SILICON CONTAINING PHOSPHORUS ATOMS

被引：3
作者：
HIRATA, M
HIRATA, M
SAITO, H
CRAWFORD, JH
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1967年 / 22卷 / 05期
关键词：
D O I：
10.1143/JPSJ.22.1301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1301 / &
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