ENHANCED DIFFUSION IN SHORT-TIME ANNEALED ARSENIC AND BORON ION-IMPLANTED SILICON

被引：0
|
作者：
SEDGWICK, TO
COHEN, SA
OEHRLEIN, G
DELINE, V
KALISH, R
SHATAS, S
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] AG ASSOCIATES,PALO ALTO,CA 94303
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C83 / C83
页数：1
相关论文
共 50 条
  • [1] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON
    KALISH, R
    SEDGWICK, TO
    MADER, S
    SHATAS, S
    APPLIED PHYSICS LETTERS, 1984, 44 (01) : 107 - 109
  • [2] ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND SHORT-TIME ANNEALED POLYCRYSTALLINE SILICON
    VOELSKOW, M
    MATTHAI, J
    KLABES, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (02): : 781 - 788
  • [3] ENHANCED TAIL DIFFUSION OF ION-IMPLANTED BORON IN SILICON
    FAN, D
    HUANG, J
    JACCODINE, RJ
    KAHORA, P
    STEVIE, F
    APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1745 - 1747
  • [4] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON
    FAIR, RB
    TSAI, JCC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C258 - C258
  • [5] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON
    FAIR, RB
    TSAI, JCC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1689 - 1696
  • [6] DIFFUSION OF ION-IMPLANTED ANTIMONY AND ARSENIC IN SILICON
    DRUM, CM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C93 - C93
  • [7] THE DIFFUSION OF ION-IMPLANTED BORON IN SILICON DIOXIDE
    NG, J
    GIBBONS, JF
    SIGMON, T
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 20 - 33
  • [8] Diffusion of ion-implanted boron and silicon in germanium
    Uppal, S
    Willoughby, AFW
    Bonar, JM
    Cowern, NEB
    Morris, RJH
    Dowsett, MG
    HIGH-MOBILITY GROUP-IV MATERIALS AND DEVICES, 2004, 809 : 237 - 242
  • [9] MECHANISMS OF DIFFUSION OF ION-IMPLANTED BORON IN SILICON
    STELMAKH, VF
    SUPRUNBELEVICH, YR
    TKACHEV, VD
    CHELYADINSKII, AR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (04): : 455 - 456
  • [10] A STUDY OF THE ION-IMPLANTED ARSENIC AND BORON TAILS IN SILICON
    BECK, SE
    FAN, DT
    JACCODINE, RJ
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S26 - S26
12345