VIBRATIONAL-MODE THEORY OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON

被引：15

作者：

DASILVA, ECF ^{[1
]}

ASSALI, LVC ^{[1
]}

LEITE, JR ^{[1
]}

DALPINO, A ^{[1
]}

机构：

[1] INST TECNOL AERONAUT,DEPT FIS,CTR TECN AEROESPACIAL,BR-12200 SAO JOSE CAMPOS,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.37.3113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3113 / 3116

页数：4

共 16 条

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[3]

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[7] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

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[8] HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

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[10] EFFECT OF HYDROGEN ON SHALLOW DOPANTS IN CRYSTALLINE SILICON [J].

PANTELIDES, ST .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :995-997

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